IRFP4668 /IRF4668 Mosfet Transistor TO-247 (SH) Code: 30096547

The IRFP4668 is a rugged, 200V N-Channel HEXFET power MOSFET designed for high-current, high-efficiency switching. Featuring an incredibly low on-resistance  of roughly 9.7 mΩ and the ability to handle up to 130A of continuous drain current, it is highly optimized for motor drives, solar inverters, and heavy-duty power supplies.

Key Specifications

• Drain-Source Voltage :200V
• Continuous Drain Current :130A
• On-Resistance :7 mΩ
• Power Dissipation :520W
• Gate-Source Voltage :± 30V
• Total Gate Charge :161 to 241 nC
• Operating Temperature Range:-55C to +175C
• Package Type:TO-247 (3-pin through-hole)

Pin Configuration

Looking at the front of the device (with the metal tab facing backward and the text facing you):

1. Pin 1 (Gate – G):Controls the switching state of the MOSFET.
2. Pin 2 (Drain – D):The high-voltage input/output (connected to the large metal tab at the back).
3. Pin 3 (Source – S):The common ground or return path.

Primary Applications

Due to its high power-handling capability and thermal ruggedness, you will frequently find the IRFP4668 used in:

• Electric Vehicle (EV) Systemsand battery management systems (BMS)
• Uninterruptible Power Supplies (UPS)
• Industrial Welding Machines
• High-Power DC-DC Convertersand solar inverters