FGL60N100BNTD IGBT Transistor TO-264 Code: 49797258

The FGL60N100BNTD is a 1000 V, 60 A N-Channel Non-Punch Through (NPT) Trench Insulated Gate Bipolar Transistor (IGBT). Produced by onsemi, this component integrates a fast-recovery diode and is designed for high-voltage, high-efficiency power conversion.

Key Specifications

• Collector-Emitter Voltage :1000 V
• Collector Current: 60 A
• Pulsed Collector Current :200 A
• Saturation Voltage : 1.5 V
• Power Dissipation :180 W
• Package:TO-264

Features & Applications

• Technology:NPT Trench technology, allowing for high avalanche ruggedness, low conduction/switching losses, and easy parallel operation.
• Built-in Diode:Includes an integrated fast recovery anti-parallel diode.
• Applications:Optimized for hard-switching and high-power applications, such as Uninterruptible Power Supplies (UPS), welding equipment, and Induction Heating (I-H).