G60N100BNTD IGBT Transistor TO-3p/TO-247 Code: 27436802

The G60N100BNTD (often listed as FGL60N100BNTD) is a high-speed, 1000V, 60A N-Channel Insulated Gate Bipolar Transistor (IGBT). It combines the fast switching speed of a MOSFET with the high-current handling of a bipolar transistor, and is built using Non-Punch Through (NPT) Trench technology.

Key Specifications

• Collector-Emitter Voltage :1000 V
• Collector Current :60 A
• Pulsed Collector Current :200 A
• Collector-Emitter Saturation Voltage :Typically 2.5 V to 2.9 V
• Maximum Power Dissipation :180 W
• Package Type:TO-264 or TO-3P (through-hole mount)
• Operating Junction Temperature :-55°C to +150°C

Features & Applications

• Features:Built-in fast recovery diode, high avalanche ruggedness, and high input impedance.
• Common Applications:Uninterruptible Power Supplies (UPS), DC-DC converters, inverters, and heavy-duty motor drives/controls.