RJH60F7 IGBT Transistor TO-3P (Red) (SH) Code: 36175223

The RJH60F7 is a high-speed, N-channel Insulated Gate Bipolar Transistor (IGBT) typically manufactured by Renesas. Designed for demanding high-power and high-frequency switching, it combines trench gate technology with a built-in fast recovery diode.

Key Specifications

• Collector-Emitter Voltage :600 V
• Collector Current :Up to 90 A (pulsed) at 25°C, with standard continuous ratings between 40 A and 50 A depending on the specific package variant (e.g., DPQ or ADPK).
• Collector-Emitter Saturation Voltage:35 V
• Power Dissipation :Up to 328.9 W maximum.
• Switching Speed:Fast turn-off times making it highly efficient.
• Package Type:TO-3P / TO-247 (designed for high thermal performance and easy heat sink mounting).

Common Applications

Due to its low saturation voltage (which minimizes power loss) and high-speed switching capabilities, the RJH60F7 is frequently used in:

• Industrial and consumer inverters
• Motor drives and control circuits
• Welding equipment

Uninterruptible Power Supplies (UPS) and high-efficiency power supplies.