5N120BND (F) / FGA5N120 ANTD (F) / G5N120 (F) IGBT Transistor (SH) TO-247 / TO-3P Code: 90392613

The 5N120BND (often listed as HGTG5N120BND or HGTP5N120BND) is a 1200V, 21A Non-Punch Through (NPT) N-Channel IGBT featuring an integrated anti-parallel hyperfast diode. It combines MOSFET high input impedance with low bipolar on-state conduction loss, ideal for high-voltage moderate-frequency switching.

⚙️ Electrical Specifications

• Collector-Emitter Voltage :1200V
• Continuous Collector Current :21A
• Pulsed Collector Current :40A
• Gate-Emitter Voltage :±20V
• Power Dissipation :167W
• Operating Junction Temperature :-55°C to +150°C

 Design Features

• NPT Technology:Non-Punch Through structure ensures stable switching parameters and smooth reverse recovery.
• Integrated Diode:Built-in anti-parallel hyperfast diode reduces component count and manages reverse recovery efficiently.
• Package Type:Typically supplied in industry-standard packages like TO-220AB or TO-3P/TO-247 depending on the configuration.

 Typical Applications

• AC and DC motor controls
• Power supplies and inverters
• Drivers for solenoids, relays, and contactors
• High voltage power supplies
• Inductive load drivers (relays, solenoids, and contactors)
• General medium-frequency high-voltage switching circuits