G40N60 UFD (F) (ON) / FGL40N60 UFD (ON) / FGH40N60 SFD / FGH40N60 SMD IGBT Transistor (SH) TO-3P Code: 34190983

The FGH40N60/ G40N60UFD (often marked as SGH40N60UFD or FGH40N60UFD) is an ultra-fast, 600V N-channel Insulated Gate Bipolar Transistor (IGBT) integrated with an ultra-fast free-wheeling diode (FWD). It is designed to minimize conduction and switching losses in high-frequency power applications

Key Specifications

• Collector-Emitter Voltage :600 V
• Collector Current:40 A up to 80 A
• Pulsed Collector Current:120 A
• Maximum Power Dissipation :160W to 290W (depending on the specific sub-package and heatsink efficiency)
• Gate-Emitter Voltage :± 20V
• Diode Reverse Recovery Time:50ns (typical) for ultra-fast switching
• Operating Junction Temperature Range:-55°C to +150°C

Physical & Design Features

• Technology:Field Stop IGBT technology providing optimum performance with low saturation voltage .
• Input Impedance:High input impedance characteristic of MOSFETs, making it easy to drive.
• Package Type:Commonly housed in through-hole packages like TO-3P or TO-247.

Common Applications

• AC and DC Motor Controls
• Uninterruptible Power Supplies (UPS)
• Switch Mode Power Supplies (SMPS)
• Solar Inverters and Welding Equipment
• General Purpose Inverters